Transistor modules MOSFET (336 items)

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 300ns Drain-source voltage: 1kV Drain current: 27A On-state resistance: 0.32Ω Power dissipation: 6...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 150ns Drain-source voltage: 170V Drain current: 260A On-state resistance: 5.2mΩ Power dissipation:...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 300ns Drain-source voltage: 1.2kV Drain current: 30A On-state resistance: 0.35Ω Power dissipation:...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 172ns Drain-source voltage: 200V Drain current: 300A On-state resistance: 3.5mΩ Power dissipation:...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 200ns Drain-source voltage: 100V Drain current: 295A On-state resistance: 5.5mΩ Power dissipation:...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 21.5A On-state resistance: 80mΩ Polarisation: unipolar Electrical mounting: sc...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 300ns Drain-source voltage: 1.2kV Drain current: 23A On-state resistance: 0.5Ω Power dissipation: ...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 300ns Drain-source voltage: 1kV Drain current: 23A On-state resistance: 390mΩ Power dissipation: 5...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 250ns Drain-source voltage: 1kV Drain current: 24A On-state resistance: 390mΩ Power dissipation: 5...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 165ns Drain-source voltage: 250V Drain current: 240A On-state resistance: 4.5mΩ Power dissipation:...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 140ns Drain-source voltage: 150V Drain current: 240A On-state resistance: 5.2mΩ Power dissipation:...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 200ns Drain-source voltage: 200V Drain current: 220A On-state resistance: 7.5mΩ Power dissipation:...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 128ns Drain-source voltage: 200V Drain current: 160A On-state resistance: 6.2mΩ Power dissipation:...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 190ns Drain-source voltage: 300V Drain current: 210A On-state resistance: 4.6mΩ Power dissipation:...

Manufacturer: IXYS Case: SOT227B Semiconductor structure: single transistor Reverse recovery time: 250ns Drain-source voltage: 300V Drain current: 192A On-state resistance: 14.5mΩ Power dissipation...