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Module; single transistor; 1.2kV; 23A; SOT227B; screw; Idm: 60A


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Module; single transistor; 1.2kV; 23A; SOT227B; screw; Idm: 60A
Module; single transistor; 1.2kV; 23A; SOT227B; screw; Idm: 60A
Item number:
     4MD6L-IXFN26N120P
Manufacturer:
     IXYS
Manufacturer no.:
     IXFN26N120P
EAN/GTIN:
     n/a
Search terms:
Power transistor
Manufacturer: IXYS
Case: SOT227B
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Drain-source voltage: 1.2kV
Drain current: 23A
On-state resistance: 0.5Ω
Power dissipation: 695W
Polarisation: unipolar
Unit price: No
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 255nC
#Promotion: ixys_202106;aac_202202
Technology: HiPerFET™;Polar™
Kind of channel: enhanced
Gate-source voltage: ±40V
Pulsed drain current: 60A
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€ 72.08
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