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Transistor: P-MOSFET x2; unipolar; -30V; -200mA; Idm: -0.4A; 150mW


Quantity:  piece  
Product information

Item number:
     4MD6L-UM6J1NTN
Manufacturer:
     ROHM Semiconductor
Manufacturer no.:
     UM6J1NTN
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Manufacturer: ROHM SEMICONDUCTOR
Mounting: SMD
Case: UMT6
Drain-source voltage: -30V
Drain current: -200mA
On-state resistance: 2.4Ω
Type of transistor: P-MOSFET x2
Power dissipation: 0.15W
Polarisation: unipolar
Kind of package: tape;reel
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -0.4A
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