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Transistor: P-MOSFET; unipolar; -20V; -1.4A; Idm: -2.8A; 600mW


Quantity:  piece  
Product information

Item number:
     4MD6L-RV2C014BCT2CL
Manufacturer:
     ROHM Semiconductor
Manufacturer no.:
     RV2C014BCT2CL
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Manufacturer: ROHM SEMICONDUCTOR
Mounting: SMD
Case: DFN1006-3
Drain-source voltage: -20V
Drain current: -1.4A
On-state resistance: 0.7Ω
Type of transistor: P-MOSFET
Power dissipation: 0.6W
Polarisation: unipolar
Kind of package: tape;reel
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -2.8A
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