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Transistor: P-MOSFET; Trench; unipolar; -60V; -230mA; Idm: -0.92A


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Transistor: P-MOSFET; Trench; unipolar; -60V; -230mA; Idm: -0.92A
Transistor: P-MOSFET; Trench; unipolar; -60V; -230mA; Idm: -0.92A
Item number:
     4MD6L-BSS84AHZGT116
Manufacturer:
     ROHM Semiconductor
Manufacturer no.:
     BSS84AHZGT116
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Manufacturer: ROHM SEMICONDUCTOR
Mounting: SMD
Case: SOT23
Drain-source voltage: -60V
Drain current: -0.23A
On-state resistance: 6.4Ω
Type of transistor: P-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: tape;reel
Unit price: No
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -0.92A
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