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Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 16A; Idm: 100A; 210W


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Product information

Item number:
     4MD6L-WMJ30N65EM-CYG
Manufacturer:
     WAYON
Manufacturer no.:
     WMJ30N65EM
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Transistor
Manufacturer: WAYON
Mounting: THT
Case: TO247-3
Drain-source voltage: 650V
Drain current: 16A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Power dissipation: 210W
Polarisation: unipolar
Kind of package: tube
Gate charge: 42nC
Technology: WMOS™ EM
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 100A
Other search terms: Transistors, power transistor
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