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Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -8.2A; Idm: -18A

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piece

Product information

Item number:
4MD6L-SUD08P06-155L-GE3

Manufacturer:
Vishay

Manufacturer no.:
SUD08P06-155L-GE3

EAN/GTIN:
n/a

Search terms:

IGBT
Power MOSFET
Power transistor
MOSFET

Manufacturer: VISHAY
Mounting: SMD
Case: DPAK;TO252
Drain-source voltage: -60V
Drain current: -8.2A
On-state resistance: 0.35Ω
Type of transistor: P-MOSFET
Power dissipation: 20.8W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 19nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -18A

... > Unipolar transistors > P channel transistors > SMD P channel transistors

Other search terms: MOSFET transistor, Transistor, Transistors, power mosfet

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Order quantity	Net	Gross	Unit

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