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Transistor: IGBT; 650V; 30A; 167W; D2PAK


Quantity:  piece  
Product information

Item number:
     4MD6L-STGB30H65DFB2
Manufacturer:
     ST Microelectronics
Manufacturer no.:
     STGB30H65DFB2
EAN/GTIN:
     n/a
Search terms:
Fast recovery diode
Fast recovery diodes
IGBT
Power transistor
Manufacturer: STMicroelectronics
Mounting: SMD
Case: D2PAK
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 90A
Type of transistor: IGBT
Power dissipation: 167W
Kind of package: tape;reel
Gate charge: 90nC
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