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Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -1.7A; Idm: -6.8A

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piece

Product information

Item number:
4MD6L-SQ2309ES-T1-GE3

Manufacturer:
Vishay

Manufacturer no.:
SQ2309ES-T1_GE3

EAN/GTIN:
n/a

Search terms:

Power transistor
MOSFET
MOSFET transistor
power transistor

Manufacturer: VISHAY
Mounting: SMD
Case: SOT23
Drain-source voltage: -60V
Drain current: -1.7A
On-state resistance: 704mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 8.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -6.8A

... > Unipolar transistors > P channel transistors > SMD P channel transistors

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Order quantity	Net	Gross	Unit

1 piece	€ 0.645*	€ 0.79335	per piece
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from 50 pieces	€ 0.311*	€ 0.38253	per piece
from 100 pieces	€ 0.278*	€ 0.34194	per piece
from 500 pieces	€ 0.24*	€ 0.2952	per piece
from 2500000 pieces	€ 0.21*	€ 0.2583	per piece

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