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Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -89.6A; 42.1W

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piece

Product information

Item number:
4MD6L-SISS61DN-T1-GE3

Manufacturer:
Vishay

Manufacturer no.:
SISS61DN-T1-GE3

EAN/GTIN:
n/a

Search terms:

Power transistor
MOSFET
MOSFET transistor
power transistor

Manufacturer: VISHAY
Mounting: SMD
Case: PowerPAK® 1212-8
Drain-source voltage: -20V
Drain current: -89.6A
On-state resistance: 9.8mΩ
Type of transistor: P-MOSFET
Power dissipation: 42.1W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 231nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -200A

... > Unipolar transistors > P channel transistors > SMD P channel transistors

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Order quantity	Net	Gross	Unit

1 piece	€ 1.00*	€ 1.23	per piece
from 10 pieces	€ 0.89*	€ 1.09	per piece
from 25 pieces	€ 0.69*	€ 0.85	per piece
from 50 pieces	€ 0.64*	€ 0.79	per piece
from 100 pieces	€ 0.57*	€ 0.70	per piece
from 250 pieces	€ 0.54*	€ 0.66	per piece
from 500 pieces	€ 0.51*	€ 0.63	per piece
from 2500000 pieces	€ 0.44*	€ 0.54	per piece

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