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Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -60A; Idm: -150A


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Product information

Item number:
     4MD6L-SISA01DN-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SISA01DN-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Manufacturer: VISHAY
Mounting: SMD
Case: PowerPAK® 1212-8
Drain-source voltage: -30V
Drain current: -60A
On-state resistance: 8.2mΩ
Type of transistor: P-MOSFET
Power dissipation: 33W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 84nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: -20...16V
Pulsed drain current: -150A
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