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Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -20.8A; 40W


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Product information

Item number:
     4MD6L-SIRA01DP-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SIRA01DP-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Manufacturer: VISHAY
Mounting: SMD
Case: PowerPAK® SO8
Drain-source voltage: -30V
Drain current: -20.8A
On-state resistance: 8.2mΩ
Type of transistor: P-MOSFET
Power dissipation: 40W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 112nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: -20...16V
Pulsed drain current: -150A
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