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Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 46.5A; Idm: 100A


Quantity:  packet  
Product information

Item number:
     4MD6L-SIJ462DP-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SIJ462DP-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: VISHAY
Mounting: SMD
Drain-source voltage: 60V
Drain current: 46.5A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 31.2W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 32nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
An overview of the conditions1
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from € 2,455.35*
  
Price is valid from 500 packets
1 packet contains 3,000 pieces (from € 0.81845* per piece)
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Unit
1 packet
€ 2,539.02*
€ 3,122.9946
per packet
from 2 packets
€ 2,529.33*
€ 3,111.0759
per packet
from 5 packets
€ 2,485.26*
€ 3,056.8698
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from 10 packets
€ 2,461.77*
€ 3,027.9771
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€ 2,455.35*
€ 3,020.0805
per packet
* Prices with asterisk are net prices excl. statutory VAT.
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