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Transistor: N-MOSFET; unipolar; 800V; 3.2A; Idm: 10A; 62.5W


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Product information

Item number:
     4MD6L-SIHU6N80AE-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SIHU6N80AE-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Transistor
Manufacturer: VISHAY
Mounting: THT
Case: IPAK;TO251
Drain-source voltage: 800V
Drain current: 3.2A
On-state resistance: 0.95Ω
Type of transistor: N-MOSFET
Power dissipation: 62.5W
Polarisation: unipolar
Kind of package: tube
Gate charge: 22.5nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 10A
Other search terms: Transistors, power transistor
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