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Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 133A; 278W


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Product information

Item number:
     4MD6L-SIHK045N60EF-T1GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SIHK045N60EF-T1GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: VISHAY
Mounting: SMD
Case: PowerPAK® 1012
Drain-source voltage: 600V
Drain current: 30A
On-state resistance: 52mΩ
Type of transistor: N-MOSFET
Power dissipation: 278W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 105nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 133A
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