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Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 63A; 174W


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Product information

Item number:
     4MD6L-SIHH100N60E-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SIHH100N60E-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: VISHAY
Mounting: SMD
Case: PowerPAK® 8x8L
Drain-source voltage: 600V
Drain current: 18A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 174W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 53nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 63A
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