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Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 202A; 520W; TO247AC


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Product information

Item number:
     4MD6L-SIHG64N65E-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SIHG64N65E-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Transistor
Manufacturer: VISHAY
Mounting: THT
Case: TO247AC
Drain-source voltage: 650V
Drain current: 40A
On-state resistance: 47mΩ
Type of transistor: N-MOSFET
Power dissipation: 520W
Polarisation: unipolar
Kind of package: tube
Gate charge: 369nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 202A
Other search terms: Transistors, power transistor
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