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Transistor: N-MOSFET; unipolar; 800V; 2.7A; Idm: 11A; 69W

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piece

Product information

Item number:
4MD6L-SIHB4N80E-GE3

Manufacturer:
Vishay

Manufacturer no.:
SIHB4N80E-GE3

EAN/GTIN:
n/a

Search terms:

Power MOSFET
Power transistor
MOSFET
MOSFET transistor

Manufacturer: VISHAY
Mounting: SMD
Case: D2PAK;TO263
Drain-source voltage: 800V
Drain current: 2.7A
On-state resistance: 1.27Ω
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 32nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 11A

... > Unipolar transistors > N channel transistors > SMD N channel transistors

Other search terms: SMD transistor, SMD transistors, Transistor, Transistors, smd transistor

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Order quantity	Net	Gross	Unit

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