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Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 63A; 227W


Quantity:  piece  
Product information

Item number:
     4MD6L-SIHB23N60E-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SIHB23N60E-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: VISHAY
Mounting: SMD
Case: D2PAK;TO263
Drain-source voltage: 600V
Drain current: 15A
On-state resistance: 158mΩ
Type of transistor: N-MOSFET
Power dissipation: 227W
Polarisation: unipolar
Kind of package: tape;reel
Unit price: No
Gate charge: 95nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 63A
Other search terms: SMD transistors, Transistor, Transistors
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