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Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 45A; 208W


Quantity:  piece  
Product information

Item number:
     4MD6L-SIHB17N80E-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SIHB17N80E-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: VISHAY
Mounting: SMD
Case: D2PAK;TO263
Drain-source voltage: 800V
Drain current: 10A
On-state resistance: 0.29Ω
Type of transistor: N-MOSFET
Power dissipation: 208W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 122nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 45A
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