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Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 100A


Quantity:  packet  
Product information

Item number:
     4MD6L-SIE812DF-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SIE812DF-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: VISHAY
Mounting: SMD
Drain-source voltage: 40V
Drain current: 60A
On-state resistance: 3.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 170nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
An overview of the conditions1
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Price
from € 5,499.36*
  
Price is valid from 10 packets
1 packet contains 3,000 pieces (from € 1.83312* per piece)
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Net
Gross
Unit
1 packet
€ 5,633.22*
€ 6,928.8606
per packet
from 2 packets
€ 5,612.46*
€ 6,903.3258
per packet
from 5 packets
€ 5,533.38*
€ 6,806.0574
per packet
from 10 packets
€ 5,499.36*
€ 6,764.2128
per packet
* Prices with asterisk are net prices excl. statutory VAT.
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