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Transistor: N-MOSFET; unipolar; 190V; 0.53A; 13W; DPAK,TO252


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Transistor: N-MOSFET; unipolar; 190V; 0.53A; 13W; DPAK,TO252
Transistor: N-MOSFET; unipolar; 190V; 0.53A; 13W; DPAK,TO252
Item number:
     4MD6L-SIB452DK-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SIB452DK-T1-GE3
EAN/GTIN:
     n/a
Manufacturer: VISHAY
Mounting: SMD
Case: DPAK;TO252
Drain-source voltage: 190V
Drain current: 0.53A
On-state resistance:
Type of transistor: N-MOSFET
Power dissipation: 13W
Polarisation: unipolar
Gate charge: 6.5nC
Kind of channel: enhanced
Gate-source voltage: ±16V
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