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Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -4.5A; 7.8W


Quantity:  packets  
Product information

Item number:
     4MD6L-SIA923EDJ-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SIA923EDJ-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Manufacturer: VISHAY
Mounting: SMD
Drain-source voltage: -20V
Drain current: -4.5A
On-state resistance: 0.165Ω
Type of transistor: P-MOSFET x2
Power dissipation: 7.8W
Polarisation: unipolar
Kind of package: tape;reel
Unit price: No
Gate charge: 25nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -15A
An overview of the conditions1
Delivery period
Stock level
Price
from € 1.46*
  
Price is valid from 300,000 packets
1 packet contains 5 pieces (from € 0.292* per piece)
Orders only in multiples of 600 packets
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Staggered prices
Order quantity
Net
Gross
Unit
from 600 packets
€ 1.53*
€ 1.8819
per packet
from 1200 packets
€ 1.52*
€ 1.8696
per packet
from 3000 packets
€ 1.49*
€ 1.8327
per packet
from 6000 packets
€ 1.47*
€ 1.8081
per packet
from 300000 packets
€ 1.46*
€ 1.7958
per packet
* Prices with asterisk are net prices excl. statutory VAT.
Our offer is only aimed at companies, public institutions and freelancers.