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Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -4.5A; 7.8W


Quantity:  packet  
Product information

Item number:
     4MD6L-SIA923AEDJ-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SIA923AEDJ-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Manufacturer: VISHAY
Mounting: SMD
Drain-source voltage: -20V
Drain current: -4.5A
On-state resistance: 0.165Ω
Type of transistor: P-MOSFET x2
Power dissipation: 7.8W
Polarisation: unipolar
Kind of package: tape;reel
Unit price: No
Gate charge: 25nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -15A
An overview of the conditions1
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from € 939.84*
  
Price is valid from 500 packets
1 packet contains 3,000 pieces (from € 0.31328* per piece)
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€ 1,217.5524
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