Product range
My Mercateo
Sign in / Register
Basket
 
 

Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 12A; Idm: 40A; 19W


Quantity:  packet  
Product information

Item number:
     4MD6L-SIA414DJ-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SIA414DJ-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: VISHAY
Mounting: SMD
Drain-source voltage: 8V
Drain current: 12A
On-state resistance: 41mΩ
Type of transistor: N-MOSFET
Power dissipation: 19W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 32nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 40A
An overview of the conditions1
Delivery period
Stock level
Price
from € 1,366.38*
  
Price is valid from 500 packets
1 packet contains 3,000 pieces (from € 0.45546* per piece)
Select conditions yourself
Share itemAdd item to shopping list
Staggered prices
Order quantity
Net
Gross
Unit
1 packet
€ 1,427.94*
€ 1,756.3662
per packet
from 2 packets
€ 1,420.62*
€ 1,747.3626
per packet
from 5 packets
€ 1,393.89*
€ 1,714.4847
per packet
from 10 packets
€ 1,376.91*
€ 1,693.5993
per packet
from 500 packets
€ 1,366.38*
€ 1,680.6474
per packet
* Prices with asterisk are net prices excl. statutory VAT.
Our offer is only aimed at companies, public institutions and freelancers.