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Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -12A; Idm: -40A


Quantity:  packet  
Product information

Item number:
     4MD6L-SIA413ADJ-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SIA413ADJ-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Manufacturer: VISHAY
Mounting: SMD
Drain-source voltage: -12V
Drain current: -12A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
Power dissipation: 19W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 57nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -40A
An overview of the conditions1
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from € 1,362.69*
  
Price is valid from 500 packets
1 packet contains 3,000 pieces (from € 0.45423* per piece)
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