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Transistor: N-MOSFET; unipolar; 60V; 5.3A; Idm: 20A; 2W; SO8


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Transistor: N-MOSFET; unipolar; 60V; 5.3A; Idm: 20A; 2W; SO8
Transistor: N-MOSFET; unipolar; 60V; 5.3A; Idm: 20A; 2W; SO8
Item number:
     4MD6L-SI9945BDY-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SI9945BDY-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: VISHAY
Mounting: SMD
Case: SO8
Drain-source voltage: 60V
Drain current: 5.3A
On-state resistance: 58mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: tape;reel
Unit price: No
Gate charge: 20nC
#Promotion: aac_202202
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Other search terms: SMD transistors, Transistor, Transistors
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