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Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -100A; Idm: -200A


Quantity:  piece  
Product information

Item number:
     4MD6L-SI7155DP-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SI7155DP-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Manufacturer: VISHAY
Mounting: SMD
Case: PowerPAK® SO8
Drain-source voltage: -40V
Drain current: -100A
On-state resistance: 4.6mΩ
Type of transistor: P-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Kind of package: tape;reel
Unit price: No
Gate charge: 330nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -200A
An overview of the conditions1
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from € 1.27*
  
Price is valid from 15,000 pieces
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