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Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -50A; 17.8W


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Product information

Item number:
     4MD6L-SI7121ADN-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SI7121ADN-T1-GE3
EAN/GTIN:
     n/a
Search terms:
IGBT
Power transistor
MOSFET
MOSFET transistor
Manufacturer: VISHAY
Mounting: SMD
Case: PowerPAK® 1212-8
Drain-source voltage: -30V
Drain current: -12A
On-state resistance: 15mΩ
Type of transistor: P-MOSFET
Power dissipation: 17.8W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 50nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -50A
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