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Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -12.6A; Idm: -32A

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piece

Product information

Item number:
4MD6L-SI4435FDY-T1-GE3

Manufacturer:
Vishay

Manufacturer no.:
SI4435FDY-T1-GE3

EAN/GTIN:
n/a

Search terms:

Power transistor
MOSFET
MOSFET transistor
power transistor

Manufacturer: VISHAY
Mounting: SMD
Case: SO8
Drain-source voltage: -30V
Drain current: -12.6A
On-state resistance: 30mΩ
Type of transistor: P-MOSFET
Power dissipation: 4.8W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 28nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -32A

... > Unipolar transistors > P channel transistors > SMD P channel transistors

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Order quantity	Net	Gross	Unit

1 piece	€ 0.524*	€ 0.64452	per piece
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from 100 pieces	€ 0.239*	€ 0.29397	per piece
from 500 pieces	€ 0.219*	€ 0.26937	per piece
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