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Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 7.9A; Idm: 20A


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Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 7.9A; Idm: 20A
Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 7.9A; Idm: 20A
Item number:
     4MD6L-SI3460DDV-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SI3460DDV-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: VISHAY
Mounting: SMD
Case: TSOP6
Drain-source voltage: 20V
Drain current: 7.9A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.7W
Polarisation: unipolar
Kind of package: tape;reel
Unit price: No
Gate charge: 18nC
#Promotion: aac_202202
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 20A
Other search terms: SMD transistors, Transistor, Transistors
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