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Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -8A; Idm: -50A


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Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -8A; Idm: -50A
Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -8A; Idm: -50A
Item number:
     4MD6L-SI3417DV-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SI3417DV-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Manufacturer: VISHAY
Mounting: SMD
Case: TSOP6
Drain-source voltage: -30V
Drain current: -8A
On-state resistance: 25.2mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.7W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 50nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -50A
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