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Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.1A; Idm: -20A

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Product information

Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.1A; Idm: -20A

Item number:
4MD6L-SI3127DV-T1-GE3

Manufacturer:
Vishay

Manufacturer no.:
SI3127DV-T1-GE3

EAN/GTIN:
n/a

Search terms:

Power transistor
MOSFET
MOSFET transistor
power transistor

Manufacturer: VISHAY
Mounting: SMD
Case: TSOP6
Drain-source voltage: -60V
Drain current: -5.1A
On-state resistance: 89mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.7W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 30nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A

... > Unipolar transistors > P channel transistors > SMD P channel transistors

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Order quantity	Net	Gross	Unit

1 piece	€ 0.514*	€ 0.63222	per piece
from 10 pieces	€ 0.445*	€ 0.54735	per piece
from 50 pieces	€ 0.405*	€ 0.49815	per piece
from 100 pieces	€ 0.279*	€ 0.34317	per piece
from 500 pieces	€ 0.205*	€ 0.25215	per piece
from 2500000 pieces	€ 0.175*	€ 0.21525	per piece

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