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Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.5A; Idm: -50A


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Product information

Item number:
     4MD6L-SI2393DS-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SI2393DS-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Manufacturer: VISHAY
Mounting: SMD
Case: SOT23
Drain-source voltage: -30V
Drain current: -7.5A
On-state resistance: 33mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 25.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Pulsed drain current: -50A
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