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Transistor: P-MOSFET; unipolar; -20V; -3A; 1.1W; SOT23


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Transistor: P-MOSFET; unipolar; -20V; -3A; 1.1W; SOT23
Transistor: P-MOSFET; unipolar; -20V; -3A; 1.1W; SOT23
Item number:
     4MD6L-SI2367DS-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SI2367DS-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Manufacturer: VISHAY
Mounting: SMD
Case: SOT23
Drain-source voltage: -20V
Drain current: -3A
On-state resistance: 66mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 9nC
Kind of channel: enhanced
Gate-source voltage: ±8V
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