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Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -3.6A; Idm: -15A

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piece

Product information

Item number:
4MD6L-SI2319DDS-T1-GE3

Manufacturer:
Vishay

Manufacturer no.:
SI2319DDS-T1-GE3

EAN/GTIN:
n/a

Search terms:

Power transistor
MOSFET
MOSFET transistor
power transistor

Manufacturer: VISHAY
Mounting: SMD
Case: SOT23
Drain-source voltage: -40V
Drain current: -3.6A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
Power dissipation: 1.7W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 19nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -15A

... > Unipolar transistors > P channel transistors > SMD P channel transistors

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Order quantity	Net	Gross	Unit

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