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Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 4.5A; Idm: 20A


Quantity:  piece  
Product information

Item number:
     4MD6L-SI2316BDS-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SI2316BDS-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: VISHAY
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 4.5A
On-state resistance: 80mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.66W
Polarisation: unipolar
Kind of package: tape;reel
Unit price: No
Gate charge: 9.6nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
Other search terms: SMD transistors, Transistor, Transistors
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