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Transistor: N-MOSFET; unipolar; 20V; 1.3A; Idm: 4A; 0.8W; SC70


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Transistor: N-MOSFET; unipolar; 20V; 1.3A; Idm: 4A; 0.8W; SC70
Transistor: N-MOSFET; unipolar; 20V; 1.3A; Idm: 4A; 0.8W; SC70
Item number:
     4MD6L-SI1922EDH-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SI1922EDH-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: VISHAY
Mounting: SMD
Case: SC70
Drain-source voltage: 20V
Drain current: 1.3A
On-state resistance: 198mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.8W
Polarisation: unipolar
Kind of package: tape;reel
Features of semiconductor devices: ESD protected gate
Gate charge: 2.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 4A
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