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Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 660mA; Idm: 1A


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Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 660mA; Idm: 1A
Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 660mA; Idm: 1A
Item number:
     4MD6L-SI1902DL-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SI1902DL-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: VISHAY
Mounting: SMD
Case: SC70
Drain-source voltage: 20V
Drain current: 0.66A
On-state resistance: 630µΩ
Type of transistor: N-MOSFET x2
Power dissipation: 0.27W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 0.8nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 1A
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from € 0.232*
  
Price is valid from 90,000 pieces
Minimum order quantity: 3 pieces
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€ 0.44157
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€ 0.318*
€ 0.39114
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€ 0.36654
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€ 0.34686
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€ 0.33456
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€ 0.28536
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