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Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.75A; Idm: -8A


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Product information

Item number:
     4MD6L-SI1077X-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SI1077X-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Manufacturer: VISHAY
Mounting: SMD
Case: SC89
Drain-source voltage: -20V
Drain current: -1.75A
On-state resistance: 188mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.33W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 31.1nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -8A
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