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Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 530mA; Idm: 2A

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piece

Product information

Item number:
4MD6L-SI1062X-T1-GE3

Manufacturer:
Vishay

Manufacturer no.:
SI1062X-T1-GE3

EAN/GTIN:
n/a

Search terms:

Power MOSFET
Power transistor
MOSFET
MOSFET transistor

Manufacturer: VISHAY
Mounting: SMD
Case: SC89;SOT563
Drain-source voltage: 20V
Drain current: 0.53A
On-state resistance: 762mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.22W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 2.7nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 2A

... > Unipolar transistors > N channel transistors > SMD N channel transistors

Other search terms: SMD transistor, SMD transistors, Transistor, Transistors, smd transistor

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Order quantity	Net	Gross	Unit

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