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Transistor: N-MOSFET; SiC; unipolar; 650V; 21A; Idm: 52A; 103W; TO247


Quantity:  piece  
Product information

Item number:
     4MD6L-SCT3120ALGC11
Manufacturer:
     ROHM Semiconductor
Manufacturer no.:
     SCT3120ALGC11
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Transistor
Manufacturer: ROHM SEMICONDUCTOR
Mounting: THT
Case: TO247
Drain-source voltage: 650V
Drain current: 21A
On-state resistance: 156mΩ
Type of transistor: N-MOSFET
Power dissipation: 103W
Polarisation: unipolar
Kind of package: tube
Unit price: No
Gate charge: 38nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -4...22V
Pulsed drain current: 52A
Other search terms: Transistors
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from € 6.80*
  
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