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Transistor: P-MOSFET; Trench; unipolar; -20V; -700mA; Idm: -2.8A


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Product information

Item number:
     4MD6L-PMZ350UPEYL
Manufacturer:
     Nexperia
Manufacturer no.:
     PMZ350UPEYL
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Manufacturer: NEXPERIA
Mounting: SMD
Case: DFN1006-3;SOT883
Drain-source voltage: -20V
Drain current: -0.7A
On-state resistance: 645mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of package: tape;reel
Features of semiconductor devices: ESD protected gate
Gate charge: 1.9nC
Technology: Trench
Kind of channel: enhanced
Pulsed drain current: -2.8A
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