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Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 12.6A; 8.36W


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Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 12.6A; 8.36W
Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 12.6A; 8.36W
Item number:
     4MD6L-PMV55ENEAR
Manufacturer:
     Nexperia
Manufacturer no.:
     PMV55ENEAR
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: NEXPERIA
Mounting: SMD
Case: SOT23;TO236AB
Drain-source voltage: 60V
Drain current: 2A
On-state resistance: 0.12Ω
Type of transistor: N-MOSFET
Power dissipation: 8.36W
Polarisation: unipolar
Kind of package: tape;reel
Features of semiconductor devices: ESD protected gate;logic level
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 12.6A
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