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Transistor: P-MOSFET x2; Trench; unipolar; -20V; -300mA; Idm: -2A


Quantity:  piece  
Product information

Item number:
     4MD6L-PMDXB950UPEZ
Manufacturer:
     Nexperia
Manufacturer no.:
     PMDXB950UPEZ
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Manufacturer: NEXPERIA
Mounting: SMD
Case: SOT1216;DFN1010B-6
Drain-source voltage: -20V
Drain current: -300mA
On-state resistance: 2.1Ω
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Kind of package: tape;reel
Unit price: No
Version: ESD
Gate charge: 2.1nC
#Promotion: aac_202202
Technology: Trench
Kind of channel: enhanced
Pulsed drain current: -2A
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