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Transistor: N-MOSFET; unipolar; 60V; 190mA; Idm: 1.2A; 0.83W

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Transistor: N-MOSFET; unipolar; 60V; 190mA; Idm: 1.2A; 0.83W

Item number:
4MD6L-PMBF170.215

Manufacturer:
Nexperia

Manufacturer no.:
PMBF170,215

EAN/GTIN:
n/a

Search terms:

Field effect transistor
Field effect transistors
Power transistor
MOSFET

Manufacturer: NEXPERIA
Mounting: SMD
Case: SOT23;TO236AB
Drain-source voltage: 60V
Drain current: 0.19A
On-state resistance: 9.25Ω
Type of transistor: N-MOSFET
Power dissipation: 0.83W
Polarisation: unipolar
Kind of package: tape;reel
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1.2A

... > Unipolar transistors > N channel transistors > SMD N channel transistors

Other search terms: MOSFET transistor, SMD transistor, SMD transistors, Transistor, Transistors, field effect transistor

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Order quantity	Net	Gross	Unit

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