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Transistor: N-MOSFET; Trench; unipolar; 60V; 0.2A; Idm: 0.9A; 0.68W


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Product information

Item number:
     4MD6L-NX7002BKMBYL
Manufacturer:
     Nexperia
Manufacturer no.:
     NX7002BKMBYL
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: NEXPERIA
Mounting: SMD
Case: SOT883B;DFN1006B-3
Drain-source voltage: 60V
Drain current: 0.2A
On-state resistance: 5.7Ω
Type of transistor: N-MOSFET
Power dissipation: 0.68W
Polarisation: unipolar
Kind of package: tape;reel
Features of semiconductor devices: ESD protected gate
Gate charge: 1nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 0.9A
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