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Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 102A; Idm: 440A


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Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 102A; Idm: 440A
Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 102A; Idm: 440A
Item number:
     4MD6L-MMIX1F160N30T
Manufacturer:
     IXYS
Manufacturer no.:
     MMIX1F160N30T
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: IXYS
Mounting: SMD
Case: SMPD
Reverse recovery time: 200ns
Drain-source voltage: 300V
Drain current: 102A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Power dissipation: 570W
Polarisation: unipolar
Gate charge: 367nC
Technology: HiPerFET™;GigaMOS™;Trench™
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 440A
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€ 55.31
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€ 37.96*
€ 46.69
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€ 41.00
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