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Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 630W


Quantity:  piece  
Product information

Item number:
     4MD6L-MIEB101H1200EH
Manufacturer:
     IXYS
Manufacturer no.:
     MIEB101H1200EH
EAN/GTIN:
     n/a
Search terms:
IGBT modules
Power transistor
Transistor
Transistors
Manufacturer: IXYS
Case: E3-Pack
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 128A
Pulsed collector current: 200A
Application: motors;photovoltaics
Power dissipation: 630W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Sonic FRD™;SPT+
Topology: H-bridge
Other search terms: power transistor
An overview of the conditions1
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Price
from € 123.83*
  
Price is valid from 500 pieces
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Net
Gross
Unit
1 piece
€ 181.09*
€ 222.74
per piece
from 2 pieces
€ 180.99*
€ 222.62
per piece
from 3 pieces
€ 159.70*
€ 196.43
per piece
from 5 pieces
€ 138.21*
€ 170.00
per piece
from 10 pieces
€ 132.58*
€ 163.07
per piece
from 500 pieces
€ 123.83*
€ 152.31
per piece
* Prices with asterisk are net prices excl. statutory VAT.
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