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Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 23A; 136W; D2PAK-7


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Product information

Item number:
     4MD6L-LGE3M80120J
Manufacturer:
     LUGUANG ELECTRONIC
Manufacturer no.:
     LGE3M80120J
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: LUGUANG ELECTRONIC
Mounting: SMD
Case: D2PAK-7
Drain-source voltage: 1.2kV
Drain current: 23A
On-state resistance: 96mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Kind of package: tape;reel
Features of semiconductor devices: Kelvin terminal
Gate charge: 20.8nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -3...15V
Other search terms: SMD transistors, Transistor, Transistors
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from € 7.42*
  
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